Transistor

2N3906
New Product

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (PNP)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
•PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is alsomanufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT3906.

max. ∅ 0.022 (0.55) 0.098 (2.5)
Dimensions in inches and(millimeters)

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

Bottom View

Maximum Ratings& Thermal Characteristics
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation TA = 25°C TC = 25°C Symbol –VCEO –VCBO –VEBO –IC PtotRΘJA Tj TS

Ratings at 25°C ambient temperature unless otherwise specified.

Value 40 40 5.0 200 625 1.5 250(1) 150 –65 to +150

Unit V V V mA mW W °C/W °C °C

Thermal Resistance Junction toAmbient Air Junction Temperature Storage Temperature Range
Note: (1) Valid provided that leads are kept at ambient temperature.

Document Number 88114 07-May-02

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2N3906
VishaySemiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter

J

= 25°C unless otherwise noted)

Symbol

Test Condition -VCE = 1 V, -IC = 0.1 mA -VCE = 1 V, -IC =1 mA -VCE = 1 V, -IC = 10 mA -VCE = 1 V, -IC = 50 mA -VCE = 1 V, -IC = 100 mA -VEB = 3 V, -VCE = 30 V -VEB = 3 V, -VCE = 30 V -IC = 10 mA, -IB = 1 mA -IC = 50 mA, -IB = 5 mA -IC = 10 mA, -IB = 1 mA-IC = 50 mA, -IB = 5 mA -IC = 1 mA, IB = 0 -IC = 10 µA, IE = 0 -IE = 10 µA, IC = 0 -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 20 V, -IC = 10 mA f = 100 MHz -VCB = 5...