Triac expo

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2N6071A/B Series
Preferred Device

Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity ofapplied anode voltage with positive or negative gate triggering.

TRIACS 4.0 A RMS, 200 − 600 V

• Pb−Free Package is Available* • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling • • • • •
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltagesto 600 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Device Marking: Device Type, e.g., 2N6071A, Date Code
3 MT2 G MT1


TO−225 CASE 077 STYLE 5 2 1

1. Cathode 2. Anode 3. Gate x y Y WW YWW 2N 60xy = 1, 3, 5= A, B = Year = Work Week

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2004


September, 2004 − Rev. 5

Publication Order Number: 2N6071/D

2N6071A/B Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating *Peak Repetitive Off-State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B *On-State RMS Current (TC = 85°C) FullCycle Sine Wave 50 to 60 Hz *Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C) *Average Gate Power (t = 8.3 ms, TC = 85°C) *Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TC = 85°C) *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) IT(RMS)ITSM I2t PGM PG(AV) VGM TJ Tstg − Symbol VDRM, VRRM 200 400 600 4.0 30 3.7 10 0.5 5.0 −40 to +110 −40 to +150 8.0 A A A2s W W V °C °C in. lb. Value Unit V

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does notappreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.

Characteristic *Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds *Indicates JEDEC Registered Data. Symbol RqJC RqJA TL Max 3.5 75 260 Unit °C/W °C/W °C

Device 2N6071A 2N6071B 2N6071BG 2N6071BT 2N6073A 2N6073B 2N6075A 2N6075B Package TO−225 TO−225 TO−225 (Pb−Free) TO−225 TO−225 TO−225 TO−225 TO−225 Shipping† 500 Units / Box 500 Units / Box 500 Units / Box 50 Units / Rail 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box

†For information on tape and reel specifications, including part orientation and tape sizes,...
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