Mosfet
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Publicado: 22 de junio de 2011
AO4800
30V Dual N-Channel MOSFET
General Description
The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficientswitch and synchronous rectifier combination for use in buck converters.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 27mΩ <32mΩ < 50mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1
D1
D1
G1 S1
G2 S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwisenoted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C Junction and StorageTemperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25°C TA=70°C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG
Maximum30 ±12 6.9 5.8 40 14 10 2 1.3 -55 to 150
Units V V A A mJ W °C
Pulsed Drain Current C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 48 74 32
Max 62.5 90 40
Units °C/W°C/W °C/W
Rev 5: Jan 2010
www.aosmd.com
Page 1 of 6
AO4800
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source BreakdownVoltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A IS=1A,VGS=0VDiode Forward Voltage Maximum Body-Diode Continuous Current 500 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 50 30 1.5 4.8 VGS=4.5V, VDS=15V, ID=6.9A 1 1 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω...
30V Dual N-Channel MOSFET
General Description
The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficientswitch and synchronous rectifier combination for use in buck converters.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 6.9A < 27mΩ <32mΩ < 50mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1
D1
D1
G1 S1
G2 S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwisenoted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C Junction and StorageTemperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25°C TA=70°C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG
Maximum30 ±12 6.9 5.8 40 14 10 2 1.3 -55 to 150
Units V V A A mJ W °C
Pulsed Drain Current C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 48 74 32
Max 62.5 90 40
Units °C/W°C/W °C/W
Rev 5: Jan 2010
www.aosmd.com
Page 1 of 6
AO4800
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source BreakdownVoltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A IS=1A,VGS=0VDiode Forward Voltage Maximum Body-Diode Continuous Current 500 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 50 30 1.5 4.8 VGS=4.5V, VDS=15V, ID=6.9A 1 1 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω...
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