Caracteristicas
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)
Features
• NPNSilicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the typesBC547 and BC548 can be supplied in all three groups. As complementary types the PNP transistors BC556...BC558 are recommended. • On special request, these transistors are also manufactured in the pinconfiguration TO-18.
Mechanical Data
max. ∅ 0.022 (0.55) 0.098 (2.5)
Dimensions in inches and (millimeters)
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk –5K per container, 20K/box E7/4K per Ammo mag., 20K/box
Bottom View
Maximum Ratings & Thermal Characteristics
Parameter Collector-Base Voltage BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547BC548 BC546, BC547 BC548 Symbol VCBO
Ratings at 25°C ambient temperature unless otherwise specified.
Value 80 50 30 80 50 30 65 45 30 6 5 100 200 200 200 500 250
(1) (1)
Unit VCollector-Emitter Voltage
VCES
V
Collector-Emitter Voltage
VCEO
V
Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb =25°C
VEBO IC ICM IBM -IEM Ptot RΘJA Tj TS
V mA mA mA mA mW °C/W °C °C
Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
150 –65 to +150
Note:(1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Document Number 88160 08-May-02
www.vishay.com 1
BC546 thru BC548
Vishay Semiconductorsformerly General Semiconductor
Electrical Characteristics (T
Parameter
Current gain group
J
= 25°C unless otherwise noted)
Symbol A B C A B C A B C A B C A B C A B C A B C VCEsat VBEsat VBE...
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