Data sheet 2n3906

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2N3906 / MMBT3906 / PZT3906

2N3906

MMBT3906
C

PZT3906
C

E C B

E C

TO-92
E

SOT-23
Mark: 2A

B

SOT-223

B

PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-BaseVoltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
40 40 5.0 200 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junctiontemperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance,Junction to Case Thermal Resistance, Junction to Ambient 2N3906 625 5.0 83.3 200

Max
*MMBT3906 350 2.8 357 **PZT3906 1,000 8.0 125

Units
mW mW/°C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

 2001 Fairchild Semiconductor Corporation

2N3906/MMBT3906/PZT3906, Rev A 2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector CutoffCurrent IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 30 V, VBE = 3.0 V VCE = 30 V, VBE = 3.0 V 40 40 5.0 50 50 V V V nA nA

ON CHARACTERISTICS
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA60 80 100 60 30 300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.65

0.25 0.4 0.85 0.95

V V V V

SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7 kHz 250 4.5 10.0 4.0 MHz pF pF dB

SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 225 75 ns ns ns ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity forPNP transistors.

Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier
(continued)

Typical Characteristics

V CESAT - COLLECTOR EMITTER VOLTAGE (V)h F E - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current
250
V CE = 1 .0V
125 °C

Collector-Emitter Saturation Voltage vs Collector Current
0.3 0.25 0.2 0.15 0.1
125°C 25 °C

β = 10

200

150
25 °C

100

- 40 °C

0.05 0

- 40 °C

50 0.1

0.2

0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA)

50

100

1

10 100 I C - COLLECTOR...
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