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DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

BC337
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 10

1999 Apr 15

Philips Semiconductors

Product specification

NPN general purpose transistor

BC337
PINNING

FEATURES
• High current (max. 500 mA)

PIN

• Low voltage (max. 45 V).

DESCRIPTION

1

base

3APPLICATIONS

emitter

2

collector

• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
1
handbook, halfpage

DESCRIPTION

3

2
3

2

NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: BC327.

1

MAM182

Fig.1

Simplified outline (TO-92; SOT54) and
symbol.

LIMITING VALUES
In accordance with the AbsoluteMaximum Rating System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

50

VCEO

collector-emitter voltage

open base

−

45

V

VEBO

emitter-base voltage

open collector

−

5

V

IC

collector current (DC)

−

500

mA

ICM

peak collector current

−

1

A

IBM

peak basecurrent

−

200

mA

Ptot

total power dissipation

−

625

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Tamb ≤ 25 °C; note 1

Note
1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 15

2

V

Philips Semiconductors

Productspecification

NPN general purpose transistor

BC337

THERMAL CHARACTERISTICS
SYMBOL
Rth j-a

PARAMETER

CONDITIONS

thermal resistance from junction to ambient

VALUE

UNIT

0.2

K/mW

note 1

Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNITcollector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

IE = 0; VCB = 20 V

−

−

100

nA

IE = 0; VCB = 20 V; Tj = 150 °C

ICBO

−

−

5

µA

IC = 0; VEB = 5 V

−

−

100

nA

IC = 100 mA; VCE = 1 V;
see Figs 2, 3 and 4

100

−

600

BC337-16

100

−

250

BC337-25

160

−

400

BC337-40

250

−

600BC337

DC current gain

IC = 500 mA; VCE = 1 V;
see Figs 2, 3 and 4

40

−

−

VCEsat

collector-emitter saturation
voltage

IC = 500 mA; IB = 50 mA

−

−

700

mV

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V; note 1

−

−

1.2

V

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

5

−

pF

fT

transition frequency

IC= 10 mA; VCE = 5 V; f = 100 MHz

100

−

−

MHz

Note
1. VBE decreases by about 2 mV/K with increasing temperature.

1999 Apr 15

3

Philips Semiconductors

Product specification

NPN general purpose transistor

BC337

MBH721

20

handbook, full pagewidth

hFE
160
VCE = 1 V

120

80

40

0
10−1

1

10

102

IC (mA)

103

BC337-16.

Fig.2 DCcurrent gain; typical values.

MBH720

500

handbook, full pagewidth

hFE
400

VCE = 1 V
300

200

100

0
10−1

1

10

BC337-25.

Fig.3 DC current gain; typical values.

1999 Apr 15

4

102

IC (mA)

103

Philips Semiconductors

Product specification

NPN general purpose transistor

BC337

MBH722

500

handbook, full pagewidth

hFE
400
VCE = 1V

300

200

100

0
10−1

1

10

BC337-40.

Fig.4 DC current gain; typical values.

1999 Apr 15

5

102

IC (mA)

103

Philips Semiconductors

Product specification

NPN general purpose transistor

BC337

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads

SOT54

c

E
d

A

L
b

1
e1

2

D

e

3
b1

L1...