Mosfets

NIKO-SEM

N- & P-Channel Enhancement Mode Field Effect Transistor

P2503NPG

DIP-8 Halogen-Free & Lead-Free

PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 25mΩ 45mΩ ID 7A -5A

D1

D1

D2

D2

G : GATE D : DRAIN S : SOURCE
#1S1
G1 S2 G2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-SourceVoltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range L = 0.1mH TC = 25 °C TC = 70 °C
1

SYMBOL VDS VGS

N-Channel P-Channel 30 ±20 7 6 20 18 19 2.5 1.6 -55 to 150 -30 ±20 -5 -4 -20 -18

UNITS V V

TC = 25 °C TC = 70 °C

ID IDM IAS EAS PD Tj, Tstg

A

mJ W °C

THERMAL RESISTANCE RATINGS THERMALRESISTANCE Junction-to-Ambient
1 2

SYMBOL RθJA

TYPICAL

MAXIMUM 50

UNITS °C / W

Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate ThresholdVoltage VGS(th) VDS = VGS, ID = -250µA REV 1.2 1 Feb-09-2010 N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT

NIKO-SEM

N- & P-Channel Enhancement Mode Field Effect Transistor

P2503NPG

DIP-8 Halogen-Free & Lead-Free

VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS

N-ChP-Ch N-Ch P-Ch

±100 ±100 1 -1

nA

VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch

µA 10 -10

On-State Drain Current

1

ID(ON)

VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

20 -20 25 58 18 34 19 11 37 80

A

Drain-Source On-State Resistance

1

VGS = -4.5V, ID = -4A RDS(ON) VGS = 10V,ID = 7A VGS = -10V, ID = -5A

mΩ 25 45

Forward Transconductance

1

gfs

VDS = 5V, ID = 7A VDS = -5V, ID = -5A

S

DYNAMIC

Input Capacitance

Ciss

N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch

790 690 175 310 65 75 2 6.25 Ω pF

Output Capacitance

Coss

Reverse Transfer Capacitance Gate Resistance

Crss Rg

VGS = 0V, VDS = -10V, f = 1MHzN-Ch P-Ch VGS = 0V, VDS = 0V, f = 1MHz N-Ch P-Ch

REV 1.2 2 Feb-09-2010

NIKO-SEM

N- & P-Channel Enhancement Mode Field Effect Transistor

P2503NPG

DIP-8 Halogen-Free & Lead-Free

Total Gate Charge

2

Qg
2

N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Channel VDD = 10V

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-ChN-Ch P-Ch

16 14 2.5 2.2 2.1 1.9 2.2 6.7 7.5 9.7 11.8 19.8 3.7 12.3 4.4 13.4 15 19.4 21.3 35.6 7.4 22.2 nS nC

Gate-Source Charge
2

Qgs

Gate-Drain Charge

Qgd
2

Turn-On Delay Time
2

td(on)

Rise Time

tr
2

ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDD = -10V

Turn-Off Delay Time

td(off)

Fall Time

2

tf

N-Ch

ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-ChSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 7A, VGS = 0V VSD IF = -5A, VGS = 0V
1 2

1.3 -1.3 2.6 -2.6 1 -1 A

Pulsed Current

3

ISM

Forward Voltage

1

N-Ch P-Ch

V

Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature.REMARK: THE PRODUCT MARKED WITH “P2503NPG”, DATE CODE or LOT #

REV 1.2 3 Feb-09-2010

NIKO-SEM

N- & P-Channel Enhancement Mode Field Effect Transistor

P2503NPG

DIP-8 Halogen-Free & Lead-Free

N-CHANNEL

100 V GS = 0V 10 Is - Reverse Drain Current(A)
A

1

0.1

T = 125° C 25° C

-55°C

0.01

0.001 0 0.2 0.4 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4

REV...