Transistor 2n2222

PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier

February 2009

PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

PN2222A

MMBT2222A

PZT2222A

C

C

E

E C

TO-92
EBC

SOT-23
Mark:1P

B

SOT-223

B

AbsoluteMaximum Ratings * T
Symbol
VCEO VCBO VEBO IC TSTG

a

= 25×C unless otherwise noted

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range

Ratings
40 75 6.0 1.0 - 55 ~ 150

Units
V V V A °C

* This ratings are limiting values above which the serviceability of any semiconductor device may beimpaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

Ta = 25°C unless otherwise noted

Parameter
PN2222A Total Device Dissipation Derate above 25°C Thermal Resistance, Junction toCase Thermal Resistance, Junction to Ambient 625 5.0 83.3 200

Max.
*MMBT2222A 350 2.8 **PZT2222A 1,000 8.0

Units
mW mW/°C °C/W

357

125

°C/W

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

© 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 1www.fairchildsemi.com

PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier

Electrical Characteristics
Symbol
Off Characteristics

Ta = 25°C unless otherwise noted

Parameter

Test Condition

Min.

Max.

Units

BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 BV(BR)CBO Collector-Base Breakdown Voltage BV(BR)EBO Emitter-Base Breakdown Voltage ICEX ICBO IEBOIBL Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10μA, IE = 0 IE = 10μA, IC = 0 VCE = 60V, VEB(off) = 3.0V VCB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125°C VEB = 3.0V, IC = 0 VCE = 60V, VEB(off) = 3.0V

40 75 6.0 10 0.01 10 10 20

V V V nA μA μA nA nA

On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC =10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55°C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 10V * IC = 500mA, VCE = 10V * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V 0.6 35 50 75 35 100 50 40

300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage *

0.3 1.0 1.2 2.0

V V V V

Small Signal CharacteristicsfT Cobo Cibo rb’Cc NF Re(hie) Current Gain Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz IC = 20mA, VCB = 20V, f = 31.8MHz IC = 100μA, VCE = 10V, RS = 1.0KΩ, f = 1.0KHz IC = 20mA, VCE = 20V, f = 300MHz300 8.0 25 150 4.0 60 MHz pF pF pS dB Ω

Switching Characteristics td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 10 25 225 60 ns ns ns ns

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

© 2007 Fairchild Semiconductor Corporation PN2222A/MMBT2222A/PZT2222A Rev. 1.0.0 2www.fairchildsemi.com

PN2222A/MMBT2222A/PZT2222A — NPN General Purpose Amplifier

Typical Characteristics
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current
500
V CE = 5V

Collector-Emitter Saturation Voltage vs Collector Current
0.4
β = 10

400 300 200
25 °C 125 °C

0.3
125°C 캜 25 °C 캜

0.2

100
- 40 °C...