Simulacion

Philips Semiconductors

Product specification

Thyristor
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristor in a plastic envelope, suitable
for surface mounting, intended for use
in general purpose switching and
phase control applications. This
device is intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
powergate trigger circuits.

PINNING - SOT223
PIN

BT169W Series

QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM

PARAMETER
BT169
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current

EW
500

GW
600

V

0.5

0.5

0.5

0.5

A

0.8
8

0.8
8

0.8
8

0.8
8

A
A

SYMBOL

4anode

3

DW
400

cathode

2

BW
200

PIN CONFIGURATION

DESCRIPTION

1

MAX. MAX. MAX. MAX. UNIT

gate

tab

anode

a

2

1

k

g

3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.

VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)

Average on-state currentIT(RMS)
ITSM

RMS on-state current
Non-repetitive peak
on-state current

I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj

half sine wave;
Tsp ≤ 112 ˚C
all conduction angles
half sine wave;
Tj = 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/µs

I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gatecurrent
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature

MAX.
B
2001

D
4001

E
5001

UNIT
G
6001

V

-

0.63

A

-

1

A

-

8
9
0.32
50

A
A
A2s
A/µs

-40
-

1
5
5
2
0.1
150
125

A
V
V
W
W
˚C
˚C

1 Although not recommended,off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997

1

Rev 1.200

Philips Semiconductors

Product specification

Thyristor
logic level

BT169W Series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-sp

Thermal resistance
junction to solder pointThermal resistance
junction to ambient

Rth j-a

CONDITIONS

MIN.

MAX.

UNIT

-

-

15

K/W

-

156
70

-

K/W
K/W

MIN.

TYP.

MAX.

UNIT

0.2

50
2
2
1.35
0.5
0.3

200
6
5
1.5
0.8
-

µA
mA
mA
V
V
V

-

0.05

0.1

mA

MIN.

pcb mounted, minimum footprint
pcb mounted; pad area as in fig:14

TYP.

TYP.

MAX.

UNIT

-25

-

V/µs

-

2

-

µs

-

100

-

µs

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

IGT
IL
IH
VT
VGT

Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage

ID, IR

Off-state leakage current

VD = 12 V; IT = 10 mA; gate open circuit
VD = 12 V; IGT = 0.5 mA; RGK = 1kΩ
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
IT = 2 A
VD = 12 V; IT = 10 mA; gate open circuit
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;
gate open circuit
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;
RGK = 1 kΩ

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

dVD/dt

Critical rate of rise of
off-state voltage
Gate controlled turn-on
timeCircuit commutated
turn-off time

VDM =67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1k Ω
ITM = 2 A; VD = VDRM(max); IG = 10 mA;
dIG/dt = 0.1 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ

tgt
tq

September 1997

2

Rev 1.200

Philips Semiconductors

Product specification

Thyristor
logic level

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