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2N3903, 2N3904
2N3903 is a Preferred Device

General Purpose Transistors
NPN Silicon
http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C 1 2 3 mW mW/°C TO–92 CASE 29 STYLE 1 Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc 1 EMITTER STYLE 1 2 BASE

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–BaseVoltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range

MARKING DIAGRAMS
2N 3903 YWW 2N 3904 YWW

THERMAL CHARACTERISTICS (Note 1.)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RθJA RθJC Max 200 83.3Unit °C/W °C/W Y WW = Year = Work Week

1. Indicates Data in addition to JEDEC Requirements.

ORDERING INFORMATION
Device 2N3903 2N3903RLRM 2N3904 2N3904RLRA 2N3904RLRE 2N3904RLRM 2N3904RLRP 2N3904RL1 2N3904ZL1 Package TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 TO–92 Shipping 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack2000/Tape & Reel 2000/Ammo Pack

Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001

1

November, 2000 – Rev. 3

Publication Order Number: 2N3903/D

2N3903, 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–EmitterBreakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 – – – – – 50 50 Vdc Vdc Vdc nAdc nAdc

ON CHARACTERISTICS
DC Current Gain (Note 2.) (IC =0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base–Emitter Saturation Voltage (Note 2.) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N39042N3903 2N3904 2N3903 2N3904 VCE(sat) – – VBE(sat) 0.65 – 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 – – – – 150 300 – – – – Vdc –

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF – – 6.0 5.0 50 100 1.0 200 400 40 mmhos dB0.1 0.5 5.0 8.0 – fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10–4 250 300 – – – – 4.0 8.0 pF pF kΩ MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf – – – – – 35 35 175 200 50ns ns ns ns

http://onsemi.com
2

2N3903, 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k -0.5 V < 1 ns CS < 4 pF* -9.1 V′ < 1 ns 275 10 < t1 < 500 ms t1 +3 V +10.9 V 275 10 k 1N916 CS < 4 pF*

DUTY CYCLE = 2% 0

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit...
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