Sensor

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TCRT5000(L)
Vishay Semiconductors

Reflective Optical Sensor with Transistor Output
Description
The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 mm. The detector consists of a phototransistor.Applications
D Position sensor for shaft encoder D Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.

D Limit switch for mechanical motions in VCR D General purpose – wherever the space is limited
15116

94 9442

Features
D Snap-in construction for PCB mounting D Package height: 7 mm D Plastic polycarbonate housing construction
which prevents crosstalk
C A

EC

D L = long leads D Current Transfer Ratio (CTR) of typical 10%

Top view

Order Instruction
Ordering Code TCRT5000 TCRT5000(L) Sensing Distance 12 mm 12 mm Remarks Leads (3.5 mm) Long leads (15 mm)

Document Number 83760 Rev. A4, 03–Jul–00

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TCRT5000(L)
Vishay Semiconductors Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forwardcurrent Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 100 Unit V mA A mW °C

tp ≤ 10 mA Tamb ≤ 25°C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 70 5 100 100 100 Unit V V mA mW °CTamb ≤ 55°C

Sensor
Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C Symbol Ptot Tamb Tstg Tsd Value 200 –25 to +85 –25 to +100 260 Unit mW °C °C °C

2 mm from case, t ≤ 10 s

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Document Number 83760 Rev. A4, 03–Jul–00

TCRT5000(L)
Vishay Semiconductors Electrical Characteristics(Tamb = 25°C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA10

200

Sensor
Parameter Collector current Test Conditions VCE = 5 V, IF = 10 mA, D = 12 mm IF = 10 mA, IC = 0.1 mA, D = 12 mm Symbol IC 1,2) Min. 0.5 Typ. 1 Max. 2.1 0.4 Unit mA V

Collector emitter VCEsat 1,2) saturation voltage 1) See test circuit 2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)

IF

IC VCC A

Flat Mirror ∅ = 22.5 mm Rem. 2

Figure 1. Testcircuit

Document Number 83760 Rev. A4, 03–Jul–00

ÍÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍÍÍ
Figure 2. Test circuit

94 9226

96 12314

d = working distance D = Distance 12 ± 0.2

7.0 ± 0.2 = package height

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TCRT5000(L)
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) 10.000 VCE=5V IC –Collector Current ( mA ) Coupled device 200 1.000

0.100

Phototransistor 100 IR-diode

0.010

0 0
95 11071

25

50

75

100

0.001 0.1
96 11763

1.0

10.0

100.0

Tamb – Ambient Temperature ( °C )

IF – Forward Current ( mA )

Figure 3. Total Power Dissipation vs. Ambient Temperature
1000.0

Figure 6. Collector Current vs. Forward Current

10.00 IC – CollectorCurrent ( mA ) IF=50mA 20mA 1.00 10mA 5mA 0.10 2mA 1mA

I F – Forward Current ( mA )

100.0

10.0

1.0

0.1 0
96 11862

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V )

0.01 0.1
96 11764

1.0

10.0

100.0

VCE – Collector Emitter Voltage ( V )

Figure 4. Forward Current vs. Forward Voltage

Figure 7. Collector Emitter Saturation Voltage vs. Collector...
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